Power devices based on Silicon Carbide (SiC) and Gallium Nitride (GaN) are driving a rapid market transition to meet the challenging requirements of Automotive, 5G, Industrial, Consumer, High Performance Computing, Aerospace, and Defense markets.

Implementing designs with next generation materials such as SiC and GaN is not without its own unique set of challenges. New process and fabrication techniques coupled with inherent design challenges require a multiphysics approach to product development. For example, electrical current flow must be considered in all three dimensions, and additionally self-heating, aging, radiation effects, and in-circuit operation must be accurately modeled and simulated to ensure the resulting device meets all requirements.

Silvaco’s TCAD simulation solutions, such as Victory Process and Victory Device, enable power device designers to quickly develop and simulate their design. By utilizing DTCO (Design Technology Co-Optimization), designers can quickly develop, model, and simulate their designs with confidence that the production device will match their simulated device.

The benefits of using Silvaco TCAD solutions for SiC and GaN power devices include reduced development time, faster time to market, and significantly reduced development costs.

Speaker:

Dr. Garrett Schlenvogt, Director, Global Field Applications Engineering, Silvaco, Inc.

• Dr. Schlenvogt is based in Austin, TX and has been with Silvaco for over 10 years. He is responsible for Silvaco’s global FAE organization with responsibilities including presales and support of Silvaco TCAD customers for a wide variety of applications including Advanced CMOS, Display Technologies, Sensors and Power / RF devices. Additionally, Dr. Schlenvogt has led multiple research proposals and collaborations for Silvaco, working both with academic and commercial institutions. Prior to joining Silvaco, he was a research assistant at Arizona State University, with research focused on reliability simulation and modeling of CMOS technologies for harsh environments. Dr. Schlenvogt holds a BSE, MS, and Ph.D. in Electrical Engineering from Arizona State University in Tempe, Arizona.

Source: IEEE Semiconductors