Metallic Nanoparticles Come to the Rescue of DRAM
The addition of nanoparticles into DRAMs eliminates interference between neighboring cellsWhen data is accessed at very high-speed in dynamic random-access memory (DRAM) cells (above 1 gigahertz), data corruption can occur. This phenomenon, known as row hammering (RH) fail, basically means that there has been data corruption due to interference among…